2SC3605 2001-01-11 1/6 toshiba transistor silicon npn epitaxial planar type 2SC3605 vhf~uhf band low noise amplifier applications features: low noise figure, high gain nf = 1.1db, |s 21e | 2 = 10db (f = 1ghz) maximum ratings (ta = 25c) characteristic symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 3 v collector current i c 80 ma base current i b 40 ma collector power dissipation p c 600 mw junction temperature t j 150 c storage temperature range t stg ? 55~150 c microwave characteristics (ta = 25c) characteristic symbol test condition min typ. max unit transition frequency f t v ce = 10v, i c = 20ma 5 6.5 ? ghz |s 21e | 2 (1) v ce = 10v, i c = 20ma, f = 500mhz ? 16 ? insertion gain |s 21e | 2 (2) v ce = 10v, i c = 20ma, f = 1ghz 7.5 10 ? db nf (1) v ce = 10v, i c = 5ma, f = 1ghz ? 1.1 ? noise figure nf (2) v ce = 10v, i c = 40ma, f = 1ghz ? 1.8 3 db jedec to ? 92 eiaj sc ? 43 toshiba 2 ? 5f1e weight: 0.21g unit in mm toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in ge neral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury o r damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handlin g guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume n t shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from i ts use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others. the information contained herein is subject to change without notice. 000707 eaa1
2SC3605 2001-01-11 2/6 electrical characteristics (ta=25c) characteristic symbol test condition min typ. max unit collector cut-off current i cbo v ce = 10v, i e = 0 ? ? 1 a emitter cut-off current i ebo v eb = 1v, i e = 0 ? ? 1 a dc current gain h fe v ce = 10v, i c = 20ma 30 ? 250 ? output capacitance c ob ? 1.2 ? pf reverse transfer capacitance c re v cb = 10v, i e = 0, f = 1mhz (note) ? 0.75 1.2 pf note: c re is measured by 3 ? terminal method with capacitance bridge.
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